Commercial SiC device processing: Status and requirements with respect to SiC based power devices-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Commercial SiC device processing: Status and requirements with respect to SiC based power devices

Published:2006-10 Issue:4-6 Volume:40 Page:380-387
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Treu M.,Rupp R.,Blaschitz P.,Hilsenbeck J.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference15 articles.

1. Influence of Overgrown Micropipes in the Active Area of SiC Schottky Diodes on Long Term Reliability

2. C. Knoll, Doctor’s Thesis, University of Erlangen, 1999

3. Catalytic graphitization and Ohmic contact formation on 4H–SiC

4. Formation and role of graphite and nickel silicide in nickel based ohmic contacts to n-type silicon carbide

Cited by 31 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fast Chargers for Plug-In Electric and Hybrid Vehicles;Green Energy and Technology;2024

2. A Review of gallium oxide-based Power Schottky barrier diodes;Journal of Physics D: Applied Physics;2022-07-29

3. A SiC sidewall enhanced trench JBS diode with improved forward performance;Semiconductor Science and Technology;2022-05-24

4. Revolution of Electric Vehicle Charging Technologies Accelerated by Wide Bandgap Devices;Proceedings of the IEEE;2021-06

5. Analysis of Process Variations in W-Band GaN MMIC PAs Using Nonparametric Statistics;IEEE Transactions on Microwave Theory and Techniques;2021-04

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP