An apparatus for supersonic jet epitaxy of thin films
Author:
Publisher
AIP Publishing
Subject
Instrumentation
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1150484
Reference31 articles.
1. Simulations of crystal growth: Effects of atomic beam energy
2. Pulsed supersonic jet epitaxy: A nonthermal approach to silicon growth
3. Growth and characterization of silicon thin films employing supersonic jets of SiH4 on polysilicon and Si(100)
4. Rapid heteroepitaxial growth of Ge films on (100) GaAs by pulsed supersonic free‐jet chemical beam epitaxy
5. Growth, microstructure, and strain relaxation in low‐temperature epitaxial Si1−xGex alloys deposited on Si(001) from hyperthermal beams
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Supersonic jet epitaxy of gallium nitride using triethylgallium and ammonia;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2003-01
2. Low-Temperature Growth of Epitaxial β-SiC on Si(100) Using Supersonic Molecular Beams of Methylsilane;The Journal of Physical Chemistry B;2002-07-16
3. Reflection high-energy electron diffraction study of ion-beam induced carbonization for 3C–SiC heteroepitaxial growth on Si (100);Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2001-07
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