Low-Temperature Growth of Epitaxial β-SiC on Si(100) Using Supersonic Molecular Beams of Methylsilane
Author:
Affiliation:
1. The James Franck Institute and Department of Chemistry, The University of Chicago, 5640 S. Ellis Avenue, Chicago, Illinois 60637
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Surfaces, Coatings and Films,Physical and Theoretical Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/jp020905u
Reference43 articles.
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5. Rapid heteroepitaxial growth of Ge films on (100) GaAs by pulsed supersonic free‐jet chemical beam epitaxy
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