Growth, microstructure, and strain relaxation in low‐temperature epitaxial Si1−xGex alloys deposited on Si(001) from hyperthermal beams-Reference-Cited by-同舟云学术

Growth, microstructure, and strain relaxation in low‐temperature epitaxial Si1−xGex alloys deposited on Si(001) from hyperthermal beams

Published:1996-07-15 Issue:2 Volume:80 Page:812-821
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:

Author:

Lee N.‐E.¹,Matsuoka M.¹,Sardela M. R.¹,Tian F.¹,Greene J. E.¹

Affiliation:

1. Materials Science Department, the Coordinated Science Laboratory, and the Materials Research Laboratory, University of Illinois, 1101 West Springfield Avenue, Urbana, Illinois 61801

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference64 articles.

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4. B. S. Meyerson, Proc. IEEE 80, 1592 (1992).IEEPAD0018-9219

5. Q. Lu, T. R. Bramblett, N.-E. Lee, N. Taylor, M.-A. Hasan, T. Karasawa, and J. E. Greene, J. Appl. Phys. 77, 3067 (1995).JAPIAU0021-8979

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