Rapid heteroepitaxial growth of Ge films on (100) GaAs by pulsed supersonic free‐jet chemical beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102261
Reference8 articles.
1. Precise lattice parameter determination of dislocation-free gallium arsenide—I
2. An absolute measurement of the lattice parameter of germanium using multiple-beam X-ray diffractometry
3. Pyrolytic and Laser Photolytic Growth of Crystalline and Amorphous Germanium Films from Digermane (Ge2H6)
4. Chemical beam epitaxy of InP and GaAs
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