Author:
Eres Djula,Lowndes D. H.,Tischler J. Z.,Sharp J. W.,Geohegan D. B.,Pennycook S. J.
Abstract
ABSTRACTHigh-purity digermane (Ge2H6, 5% in He) has been used to grow epitaxially oriented crystalline Ge films by pyrolysis. Amorphous Ge:H films also have been deposited by pyrolysis and ArF (193 nm) laser-induced photolysis. The amorphous-to-crystalline transition and the film's morphology was studied as a function of deposition conditions. The film's microstructure, strain and epitaxial quality were assessed using x-ray diffraction curves and scanning and transmission electron microscopy. It was found that commensurate, coherently strained epitaxial Ge films could be grown pyrolytically on (100) GaAs at low (0.05–40 m Torr) Ge2H6 partial pressures, for substrate temperatures above 380°C.
Publisher
Springer Science and Business Media LLC
Reference20 articles.
1. Precise lattice parameter determination of dislocation-free gallium arsenide—I
2. 15. Eres D. et al. (to be published)
3. Mean thickness at which vapour-deposited thin films reach continuity
4. 13. The dissociation cross section for Ge2H6 apparently has not been measured at 193 nm. However, it can be inferred from our photolytic deposition rate measurements, and from the analogy with SiH4 and Si2H6, that it is much larger than the 193 nm cross section of 3 × 10−20 cm2 for GeH4.
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