Supersonic jet epitaxy of gallium nitride using triethylgallium and ammonia-Reference-Cited by-同舟云学术

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Supersonic jet epitaxy of gallium nitride using triethylgallium and ammonia

Published:2003-01 Issue:1 Volume:21 Page:294-301
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

McGinnis Arthur J.,Thomson Darren,Banks Andrew,Preble Edward,Davis Robert F.,Lamb H. Henry

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.1532736

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of atomic incident kinetic energy on crystalline quality of epitaxial GaN thin films: A molecular dynamics study;Materials Science in Semiconductor Processing;2022-11

2. Use of molecular beams for kinetic measurements of chemical reactions on solid surfaces;Surface Science Reports;2017-05

3. Metal-organic molecular-beam epitaxy of GaN with trimethylgallium and ammonia: Experiment and modeling;Journal of Applied Physics;2005-09

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