Photoexcited carrier recombination in wide m-plane InGaN/GaN quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4820839
Reference30 articles.
1. Efficient radiative recombination and potential profile fluctuations in low-dislocation InGaN∕GaN multiple quantum wells on bulk GaN substrates
2. Dynamics of carrier recombination and localization in AlGaN quantum wells studied by time-resolved transmission spectroscopy
3. Effect of misfit dislocations on luminescence in m-plane InGaN quantum wells
4. Optical properties of extended and localized states in m-plane InGaN quantum wells
5. Crystallographic orientation dependence of dopant and impurity incorporation in GaN films grown by metalorganic chemical vapor deposition
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