Optical properties of extended and localized states in m-plane InGaN quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4794904
Reference20 articles.
1. Microscopic Description of Radiative Recombinations in InGaN/GaN Quantum Systems
2. Effect of misfit dislocations on luminescence in m-plane InGaN quantum wells
3. NonpolarInxGa1−xN/GaN(11¯00)multiple quantum wells grown onγ−LiAlO2(100)by plasma-assisted molecular-beam epitaxy
4. Radiative and nonradiative lifetimes in nonpolar m-plane In[sub x]Ga[sub 1−x]N∕GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth
5. Dynamics of polarized photoluminescence in m-plane InGaN/GaN quantum wells
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3. Effect of localized states on the optical properties in InGaAs/GaAs multiple quantum wells grown by MOCVD;Photonics and Nanostructures - Fundamentals and Applications;2022-09
4. Photoluminescence Study of Carrier Localization and Recombination in Nearly Strain‐Balanced Nonpolar InGaN/AlGaN Quantum Wells;physica status solidi (b);2022-03-06
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