NonpolarInxGa1−xN/GaN(11¯00)multiple quantum wells grown onγ−LiAlO2(100)by plasma-assisted molecular-beam epitaxy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.67.041306/fulltext
Reference21 articles.
1. Molecular-beam epitaxy of GaN/AlxGa1−xN multiple quantum wells on R-plane (101̄2) sapphire substrates
2. Structural characterization of nonpolar (112̄0) a-plane GaN thin films grown on (11̄02) r-plane sapphire
3. Threading dislocation reduction via laterally overgrown nonpolar (112̄0)a-plane GaN
4. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
5. Violet and blue emitting (In,Ga)N/GaN multiple quantum wells grown on γ-LiAlO2(100) by radio frequency plasma-assisted molecular beam epitaxy
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