Mobility of indium on the ZnO(0001) surface-Reference-Cited by-同舟云学术

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Mobility of indium on the ZnO(0001) surface

Published:2015-02-02 Issue:5 Volume:106 Page:051606
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Heinhold R.¹,Reeves R. J.¹,Williams G. T.²,Evans D. A.³,Allen M. W.¹

Affiliation:

1. The MacDiarmid Institute for Advanced Materials and Nanotechnology, University of Canterbury, Christchurch 8043, New Zealand

2. Element Six Limited, Global Innovation Centre, Didcot OX11 0QR, United Kingdom

3. Department of Physics, Aberystwyth University, Aberystwyth SY23 3BZ, United Kingdom

Funder

Royal Society of New Zealand

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4906868

Reference31 articles.

1. M. Henini , Molecular Beam Epitaxy: From Research to Mass Production ( Oxford, Newnes, 2012) p. 228.

2. Improved quality GaN grown by molecular beam epitaxy using In as a surfactant

3. Indium-facilitated growth and characterization of N-polar GaN by RF plasma-assisted molecular beam epitaxy

4. Isoelectronic indium-surfactant-doped Al0.3Ga0.7N∕GaN high electron mobility transistors

5. Effect of In-Adlayer on AlN (0001) and (000−1) Polar Surfaces

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1. Formation of GdAl2 Laves Phase in Gadolinium Zinc Oxide Epitaxy Film;JOM;2023-11-15

2. Band Alignment and Enhanced Interfacial Conductivity Manipulated by Polarization in a Surfactant-Mediated Grown κ-Ga2O3/In2O3 Heterostructure;ACS Applied Electronic Materials;2021-01-18

3. Size-controlled, high optical quality ZnO nanowires grown using colloidal Au nanoparticles and ultra-small cluster catalysts;APL Materials;2019-02

4. Influence of Atomic Hydrogen, Band Bending, and Defects in the Top Few Nanometers of Hydrothermally Prepared Zinc Oxide Nanorods;Nanoscale Research Letters;2017-01-06

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