Author:
Feng Z. H.,Cai S. J.,Chen K. J.,Lau Kei May
Subject
Physics and Astronomy (miscellaneous)
Reference18 articles.
1. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
2. Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor
3. Very-high power density AlGaN/GaN HEMTs
4. K. Boutros, M. Regan, P. Rowell, D. Gotthold, R. Birkhahn, and B. Brar, in IEDM’03 Tech. Digest, Dec. 8–10, 2003, pp. 12–51–125–2.
5. K. Joshin, T. Kikkawa, H. Yayashi, T. Maniwa, S. Yokokawa, M. Yokoyama, N. Adachi, and M. Takikawa, in IEDM’03 Tech. Digest, Dec. 8–10, 2003, pp. 12–61–126–3.
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