Correlation Between Two-Dimensional Electron Gas Mobility and Crystal Quality in AlGaN/GaN High-Electron-Mobility Transistor Structure Grown on 4H-SiC-Reference-Cited by-同舟云学术

Correlation Between Two-Dimensional Electron Gas Mobility and Crystal Quality in AlGaN/GaN High-Electron-Mobility Transistor Structure Grown on 4H-SiC

Published:2017-01-01 Issue:1 Volume:17 Page:577-580
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:j nanosci nanotechnol

Author:

Heo Cheon¹,Jang Jongjin¹,Lee Kyungjae¹,So Byungchan¹,Lee Kyungbae¹,Ko Kwangse¹,Nam Okhyun¹

Affiliation:

1. Department of Nano-Optical Engineering, Korea Polytechnic University (KPU), Convergence Center for Advanced Nano Semiconductor (CANS), 237, Sangidaehak-ro, Siheung-si, Gyeonggi-do, 429-793, Republic of Korea

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Defect controls by silicon doping in non-polar a-plane AlGaN epi-layers;Materials Express;2021-09-01

2. Drain-Bias-Dependent Study of Reverse Gate-Leakage Current in AlGaN/GaN HFETs;IEEE Transactions on Electron Devices;2021-02

3. Effect of AlxGa1−xN buffer layer on the structural and electrical properties of AlGaN/GaN/AlxGa1−xN double heterojunction high electron mobility transistor structures;Journal of Vacuum Science & Technology B;2020-03

4. Direct Current and Radio Frequency Characterizations of AlGaN/AlN/GaN/AlN Double‐Heterostructure High‐Electron Mobility Transistor (DH‐HEMT) on Sapphire;physica status solidi (a);2019-12-04

5. Trapping Effects Induced by Gate OFF-State Stress in AlGaN/GaN High-Electron-Mobility Transistors with Fe-Doped Buffer;Journal of Nanoscience and Nanotechnology;2018-11-01