Indium-facilitated growth and characterization of N-polar GaN by RF plasma-assisted molecular beam epitaxy-Reference-Cited by-同舟云学术

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Indium-facilitated growth and characterization of N-polar GaN by RF plasma-assisted molecular beam epitaxy

Published:2004-03 Issue:1-4 Volume:263 Page:301-307
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Huang J.H.,Hsieh K.Y.,Tsai J.K.,Huang H.L.,Hsieh C.H.,Lee Y.C.,Chuang K.L.,Lo Ikai,Tu L.W.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference19 articles.

1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

3. High speed, low noise ultraviolet photodetectors based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n)structures

4. Indium-induced changes in GaN(0001) surface morphology

5. In as a surfactant for the growth of GaN (0001) by plasma-assisted molecular-beam epitaxy

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mobility of indium on the ZnO(0001) surface;Applied Physics Letters;2015-02-02

2. MBE growth and interface formation of compound semiconductor heterostructures for optoelectronics;physica status solidi (b);2007-08

3. Optical characterization of InxGa1−xN alloys;Applied Surface Science;2006-10

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