In as a surfactant for the growth of GaN (0001) by plasma-assisted molecular-beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1419232
Reference9 articles.
1. Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy
2. Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy
3. Spatially modified layer properties related to the formation of gallium droplets on GaN(0001) surfaces during plasma-assisted molecular-beam epitaxy
4. Improved quality GaN grown by molecular beam epitaxy using In as a surfactant
5. Surface structures and growth kinetics of InGaN(0001) grown by molecular beam epitaxy
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