Spatially modified layer properties related to the formation of gallium droplets on GaN(0001) surfaces during plasma-assisted molecular-beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1377629
Reference14 articles.
1. Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy
2. High mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy
3. Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy
4. Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy
5. Plasma assisted molecular beam epitaxy growth of GaN
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