Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1322370
Reference11 articles.
1. Defect Donor and Acceptor in GaN
2. In situ monitoring and Hall measurements of GaN grown with GaN buffer layers
3. A comparative study of GaN epilayers grown on sapphire and SiC substrates by plasma‐assisted molecular‐beam epitaxy
4. The role of dislocation scattering in n-type GaN films
5. Dislocation Scattering in GaN
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