Dislocation Scattering in GaN
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.82.1237/fulltext
Reference23 articles.
1. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
2. High power applications for GaN-based devices
3. Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films
4. Characterization of dislocations in GaN by transmission electron diffraction and microscopy techniques
5. Defects and Interfaces in GaN Epitaxy
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