Improved quality GaN grown by molecular beam epitaxy using In as a surfactant
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122539
Reference16 articles.
1. Layer-by-layer growth of AlN and GaN by molecular beam epitaxy
2. Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy
3. Epitaxial Growth of GaN on Sapphire (0001) Substrates by Electron Cyclotron Resonance Molecular Beam Epitaxy
4. Structure of GaN films grown by molecular beam epitaxy on (0001) sapphire
5. Monitoring surface stoichiometry with the (2×2) reconstruction during growth of hexagonal‐phase GaN by molecular beam epitaxy
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