Surface structures and growth kinetics of InGaN(0001) grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Surface structures and growth kinetics of InGaN(0001) grown by molecular beam epitaxy

Published:2000 Issue:4 Volume:18 Page:2284
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Chen Huajie,Feenstra R. M.,Northrup J. E.,Zywietz T.,Neugebauer J.,Greve D. W.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 74 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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4. Stoichiometry Optimization in InGaN Epitaxy Towards Stimulated Emission in Near Infrared with Minimum Threshold;2023 IEEE 24th International Conference of Young Professionals in Electron Devices and Materials (EDM);2023-06-29

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