Effect of In-Adlayer on AlN (0001) and (000−1) Polar Surfaces-Reference-Cited by-同舟云学术

Effect of In-Adlayer on AlN (0001) and (000−1) Polar Surfaces

Published:2009-05-18 Issue:23 Volume:113 Page:10185-10188
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Zhuang Qinqin¹,Lin Wei¹,Kang Junyong¹

Affiliation:

1. Key Laboratory of Semiconductors and Applications of Fujian Province, Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen 361005, China

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp810953k

Reference24 articles.

1. High temperature growth of AlN by plasma-enhanced molecular beam epitaxy

2. Two-step Process for the Metalorganic Chemical Vapor Deposition Growth of High Quality AlN Films on Sapphire

3. Growth kinetics and morphology of high quality AlN grown on Si(111) by plasma-assisted molecular beam epitaxy

4. Growth of High-Quality AlN and AlN/GaN/AlN Heterostructure on Sapphire Substrate

5. Indium surfactant effect on AlN∕GaN heterostructures grown by metal-organic vapor-phase epitaxy: Applications to intersubband transitions

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