Excitation efficiency of electrons and holes in forward and reverse biased epitaxially grown Er-doped Si diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1338955
Reference11 articles.
1. Impurity enhancement of the 1.54‐μm Er3+luminescence in silicon
2. Enhancement of erbium photoluminescence by substitutional C alloying of Si
3. The erbium‐impurity interaction and its effects on the 1.54 μm luminescence of Er3+in crystalline silicon
4. Room‐temperature electroluminescence from Er‐doped crystalline Si
5. Optimization of erbium-doped light-emitting diodes by p-type counterdoping
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