Affiliation:
1. Shandong Jianzhu University
2. Shandong University
Abstract
The mean projected ranges and range straggling for energetic 200 – 500 keV Yb ions implanted in single crystal silicon (c-Si) at room temperature were measured by means of Rutherford backscattering followed by spectrum analysis. The measured results are compared with Monte Carlo code (SRIM2010) predictions. Our results show that the measured values of the mean projected range Rp are good agreement with the SRIM calculated values; but the difference of the range straggling ΔRp between the experiment data and the calculated results is much higher than that of Rp.
Publisher
Trans Tech Publications, Ltd.
Reference13 articles.
1. H. Ennen, G. Pomrenke, A. Axmann: Appl. Phys. Lett. Vol. 46(4) (1985), p.381.
2. X.F. Qin, S. Li, F.X. Wang, G. Fu, Y. Liang: Nucl. Instrum. Meth. B Vol. 269 (2011), p.622.
3. X.F. Qin, M. Chen, X.L. Wang, Y. Liang, and S.M. Zhang: Chinese Phys. B Vol. 19 (2010), p.113403.
4. M. Markmann, E. Neufeld, A. Sticht, K. Brunner, G. Abstreiter: Appl. Phys. Lett. Vol. 78 (2001), p.210.
5. X.F. Qin, Y.J. Ji, F.X. Wang, et al.: Journal of Shandong Jianzhu University Vol. 24 (3) (2009), p.212 (in Chinese).