Enhancement of erbium photoluminescence by substitutional C alloying of Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125085
Reference11 articles.
1. Room‐temperature sharp line electroluminescence at λ=1.54 μm from an erbium‐doped, silicon light‐emitting diode
2. Excitation and nonradiative deexcitation processes ofEr3+in crystalline Si
3. Room-temperature 1.54 μm electroluminescence from erbium-doped Si/SiGe waveguides
4. Electroluminescence of erbium–oxygen‐doped silicon diodes grown by molecular beam epitaxy
5. The erbium‐impurity interaction and its effects on the 1.54 μm luminescence of Er3+in crystalline silicon
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