The erbium‐impurity interaction and its effects on the 1.54 μm luminescence of Er3+in crystalline silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.359904
Reference32 articles.
1. 1.54‐μm luminescence of erbium‐implanted III‐V semiconductors and silicon
2. 1.54‐μm electroluminescence of erbium‐doped silicon grown by molecular beam epitaxy
3. Impurity enhancement of the 1.54‐μm Er3+luminescence in silicon
4. Local structure of 1.54‐μm‐luminescence Er3+implanted in Si
5. Optical Activation of Er3+Implanted in Silicon by Oxygen Impurities
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