The Range Distribution of Yb Ions Implanted in 6H Silicon Carbide

Author:

Qin Xi Feng1,Ma Gui Jie1,Shi Shu Hua1,Wang Feng Xiang1

Affiliation:

1. Shandong Jianzhu University

Abstract

The mean projected ranges and range straggling for energetic 200 – 500 keV Yb ions implanted in 6H-SiC were measured by means of Rutherford backscattering followed by spectrum analysis. The measured values are compared with Monte Carlo code (SRIM2012) calculations. It has been found that the measured values of the mean projected range are good agreement with the SRIM calculated values; for the range straggling , the difference between the experiment data and the calculated results is much higher than that of .

Publisher

Trans Tech Publications, Ltd.

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