The influence of heat treatment on the electrical characteristics of selenium‐implanted GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.345253
Reference18 articles.
1. Changes in Electron Concentration of Donor‐Doped GaAs Crystals Caused by Annealing
2. Stability of Heavily Doped Si Formed by As+ Implantation and Rapid Thermal Annealing
3. Metastable Activation in Rapid Thermal Annealed Arsenic Implanted Silicon
4. Kinetics of arsenic activation and clustering in high dose implanted silicon
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Transmission electron microscopy investigation of extended defects in heavily Se-doped bulk GaSb;Materials Science and Engineering: B;1994-12
2. Effects of heat treatments on the electrical properties of Te-implanted laser-annealed GaAs;Physica Status Solidi (a);1993-12-16
3. Annealing of Se+-Implanted GaAs Encapsulated with As-Doped a-Si:H;Japanese Journal of Applied Physics;1993-10-15
4. PAC investigations of the shallow donor environment in GaAs;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1992-01
5. Diffusion and deactivation characteristics in Be-implanted GaAs;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1991-03
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