PAC investigations of the shallow donor environment in GaAs-Reference-Cited by-同舟云学术

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PAC investigations of the shallow donor environment in GaAs

Published:1992-01 Issue:1-2 Volume:63 Page:227-230
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Schaefer Th.,Knauf H.,Lohmann E.,Vianden R.,Freitag K.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference17 articles.

1. Proc. Workshop on Submicroscopic Investigations in Semiconductors,1991

2. 73Se, an unusual PAC probe applied to the study of semiconductors

3. Se + and Sn + implants for n + layers in GaAs

4. Solid solubility limits in ion-implanted gallium arsenide

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Rapid Isothermal Processing (RIP);Handbook of Compound Semiconductors;1995

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