Se + and Sn + implants for n + layers in GaAs-Reference-Cited by-同舟云学术

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Se + and Sn + implants for n + layers in GaAs

Published:1985-03 Issue: Volume:7-8 Page:418-422
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Patel K.K.,Bensalem R.,Shahid M.A.,Sealy B.J.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference10 articles.

1. Transient annealing of ion implanted GaAs

2. Radiation Annealing of GaAs Implanted with Si

3. Inst. of Phys. Conf. Ser. No 46;Sealy,1978

4. Ion Beam Modification of Materials;Sealy,1978

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Component Evaporation, Defect Annealing, and Impurity Diffusion in the III–V Semiconductors;Rapid Thermal Processing of Semiconductors;1997

2. Rapid Isothermal Processing (RIP);Handbook of Compound Semiconductors;1995

3. PAC investigations of the shallow donor environment in GaAs;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1992-01

4. Ion implantation in gallium arsenide MESFET technology;IEEE Transactions on Electron Devices;1992

5. Shallow Ion Implantation in Gallium Arsenide Mesfet Technology;MRS Proceedings;1991

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