Author:
Orrman-Rossiter K.G.,Johnson S.T.,Williams J.S.
Subject
Instrumentation,Nuclear and High Energy Physics
Cited by
9 articles.
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1. Comparative study of damage production in ion implanted III–V-compounds at temperatures from 20 to 420 K;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-01
2. PAC investigations of the shallow donor environment in GaAs;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1992-01
3. Extended defects of ion‐implanted GaAs;Journal of Applied Physics;1991-12
4. Implantation temperature dependence of electrical activation, solubility, and diffusion of implanted Te, Cd, and Sn in GaAs;Journal of Applied Physics;1989-02
5. Local structure of S impurities in implanted GaAs;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1987-01