Stability of Heavily Doped Si Formed by As+ Implantation and Rapid Thermal Annealing

Abstract

ABSTRACTDeactivation of ion implanted and rapid thermal annealed (RTA) metastable arsenic in silicon during subsequent furnace annealing has been studied by sheet resistance measurement, Rutherford backs cat t ering/ channeling (RBS), and transmission electron microscopy (TEM). Following RTA, thermal annealing induces deactivation of the dopant which increases the sheet resistivity monotonically with temperature for a very short time, Dislocation loops are formed near the peak of As concentration at post-anneal temperatures of 750°C or higher, where deactivation rate is fast. At lower temperatures deactivation is accompanied by displacement of As atoms, possibly forming clusters.