Changes in Electron Concentration of Donor‐Doped GaAs Crystals Caused by Annealing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1702731
Reference7 articles.
1. Solid Solubilities of Impurity Elements in Germanium and Silicon*
2. Diffusion‐Limited Growth of Precipitate Particles
3. Diffusion‐Limited Growth of Precipitate Particles
4. Diffusion in Compound Semiconductors
5. Evidence for the Existence of High Concentrations of Lattice Defects in GaAs
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