Local Structure Around Te in Heavily Doped GaAs:Te using X-Ray Absorption Fine Structure-Reference-Cited by-同舟云学术

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Local Structure Around Te in Heavily Doped GaAs:Te using X-Ray Absorption Fine Structure

Published:2012-04 Issue:4 Volume:121 Page:879-882
ISSN:0587-4246
Container-title:Acta Physica Polonica A
language:en
Short-container-title:Acta Phys. Pol. A

Author:

Pietnoczka A.¹,Bacewicz R.¹,Slupinski T.²,Antonowicz J.¹,Wei Su-Huai³

Affiliation:

1. Warsaw University of Technology, Faculty of Physics, Koszykowa 75, Warszawa 00-662, Poland

2. Warsaw University, Faculty of Physics, Hoża 69, Warszawa 00-681, Poland

3. National Renewable Energy Laboratory (NREL), 1617 Cole Blvd, Golden, CO 80401, United States

Publisher

Institute of Physics, Polish Academy of Sciences

Subject

General Physics and Astronomy

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Donor-deactivating defects above the equilibrium doping limit in GaAs:Te,Ge and GaAs:Te studied by annealing and Hall effect under pressure;Journal of Crystal Growth;2017-06

2. High-Energy X-ray Absorption Spectroscopy in Materials Chemistry;Science of Advanced Materials;2015-10-01

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