Mid-infrared (3–8 μm) Ge1−ySny alloys (0.15 < y < 0.30): Synthesis, structural, and optical properties-Reference-Cited by-同舟云学术

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Mid-infrared (3–8 μm) Ge1−ySny alloys (0.15 < y < 0.30): Synthesis, structural, and optical properties

Published:2019-05-27 Issue:21 Volume:114 Page:212104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Xu Chi¹^ORCID,Wallace Patrick M.¹,Ringwala Dhruve A.¹,Chang Shery L. Y.¹²,Poweleit Christian D.³,Kouvetakis John¹,Menéndez José³^ORCID

Affiliation:

1. School of Molecular Sciences, Arizona State University, Tempe, Arizona 85287-1604, USA

2. Eyring Materials Center, Arizona State University, Tempe, Arizona 85287-1704, USA

3. Department of Physics, Arizona State University, Tempe, Arizona 85287-1504, USA

Funder

Air Force Office of Scientific Research

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5100275

Reference34 articles.

1. Sn-mediated Ge∕Ge(001) growth by low-temperature molecular-beam epitaxy: Surface smoothening and enhanced epitaxial thickness

2. Epitaxial growth of strained and unstrained GeSn alloys up to 25% Sn

3. Infrared dielectric response, index of refraction, and absorption of germanium-tin alloys with tin contents up to 27% deposited by molecular beam epitaxy

4. Development of epitaxial growth technology for Ge1−Sn alloy and study of its properties for Ge nanoelectronics

5. Growth of high-Sn content (28%) GeSn alloy films by sputtering epitaxy

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1. Impact of Carrier Momentum (k)-Space Separation on GeSn Infrared Photodetectors;IEEE Journal of Selected Topics in Quantum Electronics;2025-01

2. Transferable GeSn ribbon photodetectors for high-speed short-wave infrared photonic applications;Journal of Vacuum Science & Technology B;2024-06-12

3. Ge1−Sn layers with x∼0.25 on InP(001) substrate grown by low-temperature molecular beam epitaxy reaching 70 °C and in-situ Sb doping;Materials Science in Semiconductor Processing;2024-06

4. Composition and strain effects on Raman vibrational modes of GeSn alloys with Sn contents up to 31 % grown by low-temperature molecular beam epitaxy;Optical Materials;2024-03

5. Metasurface-assisted amorphous germanium-tin waveguide bolometer for mid-infrared photodetection;Optics Express;2024-01-18

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