Infrared dielectric response, index of refraction, and absorption of germanium-tin alloys with tin contents up to 27% deposited by molecular beam epitaxy-Reference-Cited by-同舟云学术

Infrared dielectric response, index of refraction, and absorption of germanium-tin alloys with tin contents up to 27% deposited by molecular beam epitaxy

Published:2018-09-17 Issue:12 Volume:113 Page:122104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Imbrenda Dominic¹^ORCID,Hickey Ryan¹,Carrasco Rigo A.²,Fernando Nalin S.²,VanDerslice Jeremy³,Zollner Stefan²^ORCID,Kolodzey James¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716, USA

2. Department of Physics, New Mexico State University, Las Cruces, New Mexico 88003, USA

3. J.A. Woollam Co., Inc., 645 M Street, Suite #102, Lincoln, Nebraska 68508, USA

Funder

National Science Foundation

Army Research Office

Air Force Office of Scientific Research

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5040853

Reference30 articles.

1. Si–Ge–Sn alloys: From growth to applications

2. Achieving direct band gap in germanium through integration of Sn alloying and external strain

3. Infrared photoresponse of GeSn/n-Ge heterojunctions grown by molecular beam epitaxy

4. In-situ gallium-doping for forming p+ germanium-tin and application in germanium-tin p-i-n photodetector

5. Infrared electroluminescence from GeSn heterojunction diodes grown by molecular beam epitaxy

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