Observation of cross-sectional electric field for GaN-based field effect transistor with field-modulating plate-Reference-Cited by-同舟云学术

Observation of cross-sectional electric field for GaN-based field effect transistor with field-modulating plate

Published:2007-05-21 Issue:21 Volume:90 Page:213504
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wakejima Akio,Ota Kazuki,Nakayama Tatsuo,Ando Yuji,Okamoto Yasuhiro,Miyamoto Hironobu,Kamiya Shinichi,Suzuki Akira

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2742288

Reference16 articles.

1. Y. Ando, Y. Okamoto, H. Miyamoto, N. Hayama, T. Nakayama, K. Kasahara, and M. Kuzuhara, IEEE 2001 International Electron Devices Meeting Technical Digest, 2001, p. 17–3.

2. AlGaN/GaN HEMTs-an overview of device operation and applications

3. High breakdown GaN HEMT with overlapping gate structure

4. High breakdown voltage GaN HFET with field plate

5. 10-W/mm AlGaN-GaN HFET with a field modulating plate

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