High breakdown voltage GaN HFET with field plate
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20010091?crawler=true&mimetype=application/pdf
Reference6 articles.
1. GaN microwave electronics
2. An Al/sub 0.3/Ga/sub 0.7/N/GaN undoped channel heterostructure field effect transistor with F/sub max/ of 107 GHz
3. High power RF operation of AlGaN/GaN HEMTs grown on insulating silicon carbide substrates
4. Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors
5. Suppression of leakage currents and their effect on the electrical performance of AlGaN/GaN modulation doped field‐effect transistors
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1. Non-equilibrium thermal transport study in steady state GaN MISHEMT channel layer based on electron Monte Carlo and phonon BTE;International Journal of Thermal Sciences;2024-07
2. Field plated, gate work function engineered AlGaN channel HEMTs with improved DC, RF and power performance;Micro and Nanostructures;2022-08
3. Design of E-mode GaN HEMTs by the Polarization Super Junction (PSJ) technology;Microelectronics Reliability;2020-11
4. TCAD simulation of a breakdown-enhanced double channel GaN metal–insulator–semiconductor field-effect transistor with a P-buried layer;Semiconductor Science and Technology;2020-05-18
5. Field-plate engineering for high breakdown voltage β-Ga2O3 nanolayer field-effect transistors;RSC Advances;2019
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