Review on the degradation of GaN-based lateral power transistors-Reference-Cited by-同舟云学术

Review on the degradation of GaN-based lateral power transistors

Published:2021-11 Issue: Volume: Page:100018
ISSN:2772-6711
Container-title:e-Prime
language:en
Short-container-title:e-Prime

Author:

De Santi C.,Buffolo M.,Rossetto I.,Bordignon T.,Brusaterra E.,Caria A.,Chiocchetta F.,Favero D.,Fregolent M.,Masin F.,Modolo N.,Nardo A.,Piva F.,Rampazzo F.,Sharma C.,Trivellin N.,Zhan G.,Meneghini M.,Zanoni E.,Meneghesso G.

Funder

Office of Naval Research

MIUR

Publisher

Elsevier BV

Reference103 articles.

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2. Reliability Analysis of Permanent Degradations on AlGaN/GaN HEMTs;Marcon;IEEE Trans. Electron Devices,2013

3. Reliability and failure analysis in power GaN-HEMTs: An overview;Meneghini,2017

4. Trapping in GaN-based metal-insulator-semiconductor transistors: Role of high drain bias and hot electrons;Meneghini;Appl. Phys. Lett.,2014

5. Review of dynamic effects and reliability of depletion and enhancement GaN HEMTs for power switching applications;De Santi;IET Power Electron,2018

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