1. 2013 First IEEE Workshop on Wide Bandgap Power Devices and Applications Y.‐F. Wu J. Gritters L. Shen Performance and robustness of first generation 600 V GaN‐on‐Si power transistors 6 10
2. kV‐class GaN‐on‐Si HEMTs enabling 99% efficiency converter at 800 V and 100 kHz;Wu Y.‐F.;IEEE Trans. Power Electron.,2014
3. 2015 Proc. of PCIM Europe 2015; Int. Exhibition and Conf. Power Electronics Intelligent Motion Renewable Energy and Energy Management Z. Wang J. Honea Y. Wu Design and implementation of a high‐efficiency three‐level inverter using GaN HEMTs 1 7
4. 2012 2012 IEEE Energy Conversion Congress and Exposition (ECCE) K. Shirabe M. Swamy J.‐K. Kang Advantages of high frequency PWM in AC motor drive applications 2977 2984
5. 2015 Proc. of PCIM Europe 2015; Int. Exhibition and Conf. Power Electronics Intelligent Motion Renewable Energy and Energy Management L. Zhou Y. Wu J. Honea High‐efficiency true bridgeless totem pole PFC based on GaN HEMT: design challenges and cost‐effective solution 1 8