Trapping in $\text{Al}_{2}\mathrm{O}_{3}/\text{GaN}$ MOScaps investigated by fast capacitive techniques
Author:
Affiliation:
1. University of Padova,Department of Information Engineering,Padova,Italy,35131
2. Ferdinand-Braun-Institut (FBH),Berlin,Germany,12489
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10117589/10117581/10117719.pdf?arnumber=10117719
Reference23 articles.
1. Effect of GaN surface treatment on Al2O3/n-GaN MOS capacitors
2. Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs
3. Study and characterization of GaN MOS capacitors: Planar vs trench topographies
4. Logarithmic trapping and detrapping in β-Ga2O3 MOSFETs: Experimental analysis and modeling
5. On the Conduction Properties of Vertical GaN n-Channel Trench MISFETs
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Origin and Recovery of Negative VTH Shift on 4H–SiC MOS Capacitors: An Analysis Based on Inverse Laplace Transform and Temperature-Dependent Measurements;Materials Science in Semiconductor Processing;2024-07
2. Trapping/Detrapping Kinetic Modeling Under Positive/Negative Gate Stress Including Inhibition Dynamics in 4H-SiC MOS Capacitors;IEEE Transactions on Electron Devices;2024-01
3. Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical Al$_{\text{2}}$O$_{\text{3}}$/GaN MOS Capacitors;IEEE Transactions on Electron Devices;2023
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