Trapping in GaN-based metal-insulator-semiconductor transistors: Role of high drain bias and hot electrons
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4869680
Reference15 articles.
1. 1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance
2. Suppression of Dynamic On-Resistance Increase and Gate Charge Measurements in High-Voltage GaN-HEMTs With Optimized Field-Plate Structure
3. Trapping and Reliability Assessment in D-Mode GaN-Based MIS-HEMTs for Power Applications
4. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
5. A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors
Cited by 52 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Investigation of Power Cycling Degradation on the Dynamic ON-Resistance of HD-GITs;IEEE Transactions on Industrial Electronics;2024-11
2. Dynamic RON Degradation in AlGaN/GaNMIS-HEMTs With Si3N4 or Si3N4/ZrO2Passivation Layer;IEEE Transactions on Electron Devices;2024-05
3. High On/Off Current Ratio and High V th/R on Stability GaN MIS-HEMTs With GaN/AlN Superlattices Barrier;IEEE Transactions on Electron Devices;2024-05
4. Heterogeneous integration of high-k complex-oxide gate dielectrics on wide band-gap high-electron-mobility transistors;Communications Engineering;2024-01-19
5. A Review of GaN HEMT Dynamic ON-Resistance and Dynamic Stress Effects on Field Distribution;IEEE Transactions on Power Electronics;2024-01
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3