Observation of Hot Electron and Impact Ionization in N-Polar GaN MIS-HEMTs-Reference-Cited by-同舟云学术

Observation of Hot Electron and Impact Ionization in N-Polar GaN MIS-HEMTs

Published:2018-07 Issue:7 Volume:39 Page:1007-1010
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Bisi Davide^ORCID,De Santi Carlo^ORCID,Meneghini Matteo^ORCID,Wienecke Steven^ORCID,Guidry Matt^ORCID,Li Haoran,Ahmadi Elaheh^ORCID,Keller Stacia,Mishra Umesh K.,Meneghesso Gaudenzio^ORCID,Zanoni Enrico

Funder

ONR through GaN HEMT Reliability Physics: From Failure Mechanisms to Testing Methods, Test Structures, and Acceleration Laws under the supervision of Dr. P. Maki

ONR under the supervision of Dr. P. Maki

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/8398557/08357956.pdf?arnumber=8357956

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High On/Off Current Ratio and High V _th/R _on Stability GaN MIS-HEMTs With GaN/AlN Superlattices Barrier;IEEE Transactions on Electron Devices;2024-05

2. Temperature Nonmonotonic Behavior of GaN HEMTs Kink Effect Caused by Trap-Assisted Impact Ionization;IEEE Transactions on Electron Devices;2024-03

3. Hot Electron-Induced Bremsstrahlung Emission in AlGaN/GaN Superlattice Castellated Field Effect Transistors;IEEE Electron Device Letters;2023-11

4. Suppression of Kink in the Output Characteristics of AlInN/GaN High Electron Mobility Transistors by Post-Gate Metallization Annealing;IEEE Journal of the Electron Devices Society;2023

5. Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability;IEEE Transactions on Electron Devices;2023