Liquid crystal electrography: Electric field mapping and detection of peak electric field strength in AlGaN/GaN high electron mobility transistors-Reference-Cited by-同舟云学术

Liquid crystal electrography: Electric field mapping and detection of peak electric field strength in AlGaN/GaN high electron mobility transistors

Published:2014-05 Issue:5 Volume:54 Page:921-925
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Möreke Janina,Hodges Chris,Mears Laura L.E.,Uren Michael J.,Richardson Robert M.,Kuball Martin

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference30 articles.

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4. Effects of SiN passivation and high-electric field on AlGaN–GaN HFET degradation;Kim;IEEE Electron Device Lett,2003

5. TEM observation of crack-and pit-shaped defects in electrically degraded GaN HEMTs;Chowdhury;IEEE Electron Device Lett,2008

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