Local electric field measurement in GaN diodes by exciton Franz–Keldysh photocurrent spectroscopy
Author:
Affiliation:
1. Department of Materials Science Engineering, The Ohio State University, Columbus, Ohio 43210, USA
2. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA
Funder
National Science Foundation
Advanced Research Projects Agency - Energy
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.5144778
Reference53 articles.
1. THE PREPARATION AND PROPERTIES OF VAPOR‐DEPOSITED SINGLE‐CRYSTAL‐LINE GaN
2. A review of junction field effect transistors for high-temperature and high-power electronics
3. High-breakdown-voltage pn-junction diodes on GaN substrates
4. Power Performance of AlGaN–GaN HEMTs Grown on SiC by Plasma-Assisted MBE
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