Stress measurements of Pt/Ti/InP and Pt/Ti/SiO2/InP systems:Insitumeasurements through sintering and after rapid thermal processing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.345190
Reference24 articles.
1. Stresses induced in GaAs by TiPt ohmic contacts
2. Stress-induced defect migration in InP/InGaAsP double-heterostructure wafers
3. Lattice defect structure of degraded InGaAsP‐InP double‐heterostructure lasers
4. Stress compensation in GaAs–Al0.24 Ga0.76 As1−y Py LPE binary layers
5. Limitations on stress compensation in AlxGa1 −xAs1−yPy–GaAs LPE layers
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