Stress compensation in GaAs–Al0.24 Ga0.76 As1−y Py LPE binary layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1663127
Reference11 articles.
1. Strain‐induced degradation of GaAs injection lasers
2. Degradation of CW GaAs double-heterojunction lasers at 300 K
3. Etch Pit Studies of GaP Liquid Phase Epitaxial Layers
4. Stress compensation in Ga1−xAlxAs1−yPy LPE layers on GaAs substrates
5. Optical waveguides in GaAs–AlGaAs epitaxial layers
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