Lattice defect structure of degraded InGaAsP‐InP double‐heterostructure lasers

Author:

Ishida K.,Kamejima T.,Matsumoto Y.,Endo K.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Cited by 36 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Analysis of common failure causes in oxide VCSELs;International Conference on Optoelectronic Materials and Devices (ICOMD 2021);2022-02-16

2. Reduced dislocation growth leads to long lifetime InAs quantum dot lasers on silicon at high temperatures;Applied Physics Letters;2021-05-10

3. Recombination-enhanced dislocation climb in InAs quantum dot lasers on silicon;Journal of Applied Physics;2020-07-14

4. Reliability and Degradation of III-V Optical Devices Focusing on Gradual Degradation;Materials and Reliability Handbook for Semiconductor Optical and Electron Devices;2012-08-23

5. A Review of Materials Issues and Degradation of III-V Compound Semiconductors and Optical Devices;ECS Transactions;2010-10-01

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