Reduced dislocation growth leads to long lifetime InAs quantum dot lasers on silicon at high temperatures-Reference-Cited by-同舟云学术

Reduced dislocation growth leads to long lifetime InAs quantum dot lasers on silicon at high temperatures

Published:2021-05-10 Issue:19 Volume:118 Page:192101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Selvidge Jennifer¹^ORCID,Hughes Eamonn T.¹^ORCID,Norman Justin C.²^ORCID,Shang Chen¹,Kennedy M. J.³,Dumont Mario³,Netherton Andrew M.³,Zhang Zeyu³,Herrick Robert W.⁴,Bowers John E.¹³,Mukherjee Kunal⁵^ORCID

Affiliation:

1. Materials Department, University of California Santa Barbara, Santa Barbara, California 93106, USA

2. Quintessent Inc., Santa Barbara, California 93102, USA

3. Department of Electronic and Computer Engineering, University of California Santa Barbara, Santa Barbara, California 93106, USA

4. Intel Corp., Santa Clara, California 95054, USA

5. Department of Material Science and Engineering, Stanford University, Stanford, California 94305, USA

Funder

Defense Advanced Research Projects Agency

Directorate for Mathematical and Physical Sciences

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/am-pdf/10.1063/5.0052316

Reference49 articles.

1. Photonic Integration With Epitaxial III–V on Silicon

2. Degradation of GaAs lasers grown by metalorganic chemical vapor deposition on Si substrates

3. Room‐temperature continuous operation ofp‐nAlxGa1−xAs‐GaAs quantum well heterostructure lasers grown on Si

4. Thermal behavior and stability of room‐temperature continuous AlxGa1−xAs‐GaAs quantum well heterostructure lasers grown on Si

5. GaAs‐based diode lasers on Si with increased lifetime obtained by using strained InGaAs active layer

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