GaAs‐based diode lasers on Si with increased lifetime obtained by using strained InGaAs active layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105921
Reference10 articles.
1. Stability of 300 K continuous operation ofp‐nAlxGa1−xAs‐GaAs quantum well lasers grown on Si
2. Continuous-wave operation of extremely low-threshold GaAs/AlGaAs broad-area injection lasers on (100) Si substrates at room temperature
3. Effects of microcracking on AlxGa1−xAs‐GaAs quantum well lasers grown on Si
4. Room‐temperature continuous operation of GaAs/AlGaAs lasers grown on Si by organometallic vapor‐phase epitaxy
5. Low‐threshold continuous‐wave room‐temperature operation of AlxGa1−xAs/GaAs single quantum well lasers grown by metalorganic chemical vapor deposition on Si substrates with SiO2back coating
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