Thermal behavior and stability of room‐temperature continuous AlxGa1−xAs‐GaAs quantum well heterostructure lasers grown on Si
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341596
Reference28 articles.
1. Continuous (300 K) photopumped laser operation of AlxGa1−xAs‐GaAs quantum well heterostructures grown on strained‐layer GaAs on Si
2. Stable continuous room‐temperature laser operation of AlxGa1−xAs‐GaAs quantum well heterostructures grown on Si
3. Room‐temperature continuous operation ofp‐nAlxGa1−xAs‐GaAs quantum well heterostructure lasers grown on Si
4. Stability of 300 K continuous operation ofp‐nAlxGa1−xAs‐GaAs quantum well lasers grown on Si
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